High voltage semiconductor device having bootstrap diode
US11469320B2 · kind B2 · utility
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11References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2020 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | Feb 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a source region and a drain region formed in a substrate and having different conductivity types, an insulating film formed between the source region and the drain region, a deep well region formed under the insulating film, and a pinch-off region formed under the insulating film and having a same conductivity type as the deep well region, wherein a depth of a bottom surface of the pinch-off region is different from a depth of a bottom surface of the deep well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.