Physical unclonable function with NAND memory array
US11469909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2018 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | Apr 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04L9/0866
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Various examples described herein are directed to systems and methods for generating data values using a NAND flash array. A memory controller may read a number of memory cells at the NAND flash array using an initial read level to generate a first raw string. The memory controller may determine that a difference between a number of bits from the first raw string having a value of logical zero and a number of bits from the first raw string having a value of logical one is greater than a threshold value and read the number of memory cells using a second read level to generate a second raw string. The memory controller may determine that a difference between a number of bits from the second raw string having a value of logical zero and a number of bits from the second raw string having a value of logical one is not greater than a threshold value and applying a cryptographic function using the second raw string to generate a first PUF value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.