Method for preparing silicon carbide wafer and silicon carbide wafer
US11474012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Jul 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.