Compound feature generation in classification of error rate of data retrieved from memory cells
US11474748B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2021 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | May 6, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory sub-system configured to: measure a plurality of sets of signal and noise characteristics of a group of memory cells in a memory device; determine a plurality of optimized read voltages of the group of memory cells from the plurality of sets of signal and noise characteristics respectively; generate features from the plurality of sets of signal and noise characteristics, including at least one compound feature generated from the plurality of sets of signal and noise characteristics; generate, using the features, a classification of a bit error rate of data retrievable from the group of memory cells; and control an operation to read the group of memory cells based on the classification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.