Patent · US Active

Method of sample preparation using dual ion beam trenching

US11476120B2 · kind B2 · utility

0Cited by

5References

9Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Purushotham Kaushik Muthur Srinath · Chandler, US
Richard Kenneth Brewer · Plano, US
Deepak Goyal · Phoenix, US

Key dates

Filing date	Mar 30, 2017
Grant date	Oct 18, 2022
Priority date	—
Expiry date	May 11, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/31774
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.