Patent · US Active

Method for dicing a semiconductor substrate into a plurality of dies

US11476162B2 · kind B2 · utility

1Cited by

3References

20Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Frank Holsteyns · Steenokkerzeel, BE
Eric Beyne · Heverlee, BE
Christophe Lorant · Gembloux, BE
Simon Braun · Mannheim, DE

Key dates

Filing date	Sep 30, 2020
Grant date	Oct 18, 2022
Priority date	—
Expiry date	Nov 30, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/94
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is provided for dicing a semiconductor substrate into a plurality of dies, the semiconductor substrate having a front side including a plurality of device areas, a back side, and a plurality of through substrate vias. The method includes defining, from the front side, at least one trench to be formed between adjacent device areas, forming the at least one trench, from the front side of the semiconductor substrate, arranging a protective layer on the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate, processing the back side of the semiconductor substrate to form at least one contact, the contact contacting at least one through substrate via, etching through the minor portion of the thickness of the semiconductor substrate underneath the at least one trench, and dicing the semiconductor substrate into the plurality of dies.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.