Semiconductor structure and manufacturing method thereof
US11476193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Apr 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate including a first surface; a dielectric layer disposed over the first surface of the substrate; a first conductive line surrounded by the dielectric layer and extended over the first surface of the substrate; a second conductive line disposed adjacent to the first conductive line, surrounded by the dielectric layer and extended parallel to the first conductive line; a conductive via disposed over the first conductive line and extended through the dielectric layer; and a cross section of the conductive via substantially parallel to the first surface of the substrate, wherein the cross section of the conductive via is at least partially protruded from the first conductive line towards the second conductive line. Further, a method of manufacturing the semiconductor structure is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.