Image sensor with light blocking layer
US11476287B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Jan 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/32
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.