Infrared image sensor component manufacturing method
US11476288B2 · kind B2 · utility
0Cited by
35References
20Claims
0Family size
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Key dates
| Filing date | Oct 21, 2019 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Jul 20, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method includes epitaxially growing a first III-V compound layer over a semiconductive substrate. A second III-V compound layer is epitaxially grown over the first III-V compound layer. A source/drain contact is formed over the second III-V compound layer. A gate structure is formed over the second III-V compound layer. A pattern is formed shielding the gate structure and the source/drain contact, in which a portion of the second III-V compound layer is free from coverage by the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.