Semiconductor device
US11476325B2 · kind B2 · utility
0Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Jan 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/01
Abstract
A semiconductor apparatus includes a plurality of semiconductor devices with a single substrate, a plurality of trench regions, each trench region including a trench, wherein the single substrate includes a substrate layer, a first epitaxial layer of a first conductivity type, disposed on the substrate layer, and a second epitaxial layer of a second conductivity type, disposed on the first epitaxial layer, wherein each trench of the plurality of trench regions extends through the second epitaxial layer and into the first epitaxial layer, thereby isolating adjacent semiconductor devices of the plurality of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.