Silicide structure of an integrated transistor device and method of providing same
US11476334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2018 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Apr 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques and mechanisms for providing functionality of a transistor which comprises a conformal layer of a gate work function silicide. In an embodiment, the transistor comprises a channel region and a gate dielectric which extends and adjoins the channel region. The gate dielectric also adjoins a layer structure of the transistor, the layer structure comprising a silicide. The silicide includes silicon and a component D which comprises a non-metal element from one of Groups IIIa, IVa, or Va. In another embodiment, the silicide further comprises a component M which includes a transition metal element from one of Groups IVb, Vb, VIb, VIIB, or VIIIb and/or which includes a metal element from one of Groups IIIa, IVa, or Va.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.