Orb Acton
5Patents
1h-index
23Co-inventors
43Inventor score
Filing activity: Feb 8, 2018 → Apr 21, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11348916B2 | Leave-behind protective layer having secondary purpose | Electricity | 2 | Active |
| US12051698B2 | Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer | Electricity | 0 | Active |
| US11996408B2 | Leave-behind protective layer having secondary purpose | Electricity | 0 | Active |
| US11476334B2 | Silicide structure of an integrated transistor device and method of providing same | Electricity | 0 | Active |
| US12310060B2 | Gate-all-around integrated circuit structures having uniform threshold voltages and tight gate endcap tolerances | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.