Method for producing an optoelectronic semiconductor chip having structures at the radiation passage surface, and optoelectronic semiconductor chip having structures at the radiation passage surface

US11476389B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Michael Huber · Bad Abbach, DE
• Jana Sommerfeld · Regensburg, DE
• Martin Herz · Altdorf, DE
• Sebastian Hoibl · Kiefersfelden, DE
• Christian Rumbolz · Lappersdorf, DE
• Albrecht Kieslich · Radebeul, DE
• Bernd Boehm · Obertraubling, DE
• Georg Rossbach · Regensburg, DE
• Markus Broell · Cork, IE

Key dates

• Filing date: Sep 3, 2018
• Grant date: Oct 18, 2022
• Expiry date: Feb 2, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.