Patent · US Active

Apparatus and method of depositing a layer at atmospheric pressure

US11479854B2 · kind B2 · utility

1Cited by

18References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Olaf Fiedler · Dresden, DE
Ullrich Hannemann · Dresden, DE
André Horn · Braunschweig, DE
Daniel Kai Simon · Dresden, DE
Sigurd Volker Zehner · Dresden, DE

Key dates

Filing date	Aug 20, 2019
Grant date	Oct 25, 2022
Priority date	—
Expiry date	Sep 26, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/28556
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.