In-line device electrical property estimating method and test structure of the same
US11480606B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 14, 2016 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Mar 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.