Reinforcement learning pulse programming
US11481624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2019 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Mar 23, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A NAND memory device that includes a plurality of blocks, each block comprises a plurality of wordlines and an associated agent, and each wordline comprises a plurality of cells and a plurality of voltage levels and an associated agent, and each voltage level comprises an agent. A method of programming the NAND memory device includes receiving, by an agent at a given rank in the plurality of ranks, parameters from a higher rank agent in the hierarchy of ranks and a state from the memory device; determining, by the agent, an action from the parameters and the state; passing the action as parameters to a lower rank agent in the hierarchy of ranks; and updating the agent based on a reward output by the agent, wherein the reward measures a difference between the target voltage levels of the cells and the actual voltage levels programmed to the cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.