Ultra-low temperature ALD to form high-quality Si-containing film
US11482414B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Dec 18, 2019 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Dec 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.