Patent · US Active

Planarization method

US11482664B2 · kind B2 · utility

0Cited by
5References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 29, 2020
Grant dateOct 25, 2022
Priority date
Expiry dateJan 26, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/06
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

The invention provides a planarization method, which can make the local flatness of the product to be processed more uniform. The product has a cavity filled with oxide and includes a first electrode layer, a piezoelectric layer and a second electrode layer superposed on the cavity. The first electrode layer covers the cavity and includes a first inclined face around the first electrode layer, and the piezoelectric layer covers the first electrode layer and is arranged on the first electrode layer. The planarization method includes: depositing a passivation layer on the second electrode layer and etching the passivation layer completely until the thickness of the passivation layer is reduced to the required thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.