Measurement method of reflection spectrum of vertical cavity surface emitting laser diode (VCSEL) and epitaxial wafer test fixture
US11482830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2020 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Sep 8, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8438
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.