Method for rapid growth of long seed KDP-type crystals
US11486053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2021 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Jan 28, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/3551
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A pyramidal growth method for long-seed KDP-type crystal. In the growth method provided by the present invention, the lower end of the long-seed crystal is restricted by a lower tray, and the upper end is free to grow into a pyramidal. At the same time, the four prismatic faces at two directions of [100] and [010] can grow, avoiding growth stress problem during crystal growth, and all cut optical elements have high optical quality. Because the growth process is that four prismatic faces with highly similar growth environments grow at the same time and stirring is applied by blade-like stirring paddles during the crystal growth process, the cut optical elements have high optical uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.