Method and system of surface topography measurement for lithography
US11487210B1 · kind B1 · utility
1Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Aug 12, 2021 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Aug 12, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7011
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method includes: providing a workpiece to a semiconductor apparatus, the workpiece comprising a material layer, wherein the material layer includes a plurality of areas extending along a first axis; scanning the workpiece in a first direction along the first axis to generate first topography measurement data; scanning the workpiece in a second direction along the first axis to generate second topography measurement data; and performing an exposure operation on the material layer according to the first topography measurement data and the second topography measurement data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.