Patent · US Active

Semiconductor device for condition-controlled radio frequency system

US11488802B2 · kind B2 · utility

0Cited by
4References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 21, 2021
Grant dateNov 1, 2022
Priority date
Expiry dateJun 21, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/24564
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

This application relates to a semiconductor device for a condition-controlled radio frequency (RF) system. In an embodiment of this application, an RF detection apparatus includes: a high-pass filter (HPF), one end of which is electrically coupled to an RF loop electrode of a ceramic heater, and another end of which is grounded; a voltage measurer, connected to the HPF in parallel; and a low-pass circuit, connected to the HPF in parallel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.