Method and apparatus for reducing particle defects in plasma etch chambers
US11488812B2 · kind B2 · utility
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40References
9Claims
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Key dates
| Filing date | Jun 11, 2019 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Jun 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.