Semiconductor device

US11488961B2 · kind B2 · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventors

• Min-Chung Cheng · Taoyuan, TW
• Chen-Tsung Liao · New Taipei, TW
• Cheng Wei Chiu · Tainan, TW

Key dates

• Filing date: Mar 2, 2021
• Grant date: Nov 1, 2022
• Expiry date: Mar 10, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/053

Abstract

A semiconductor device includes a substrate, an oxide layer and a word line. The substrate has a plurality of protruding portions. Adjacent two of the protruding portions define a dense zone, and another adjacent two of the protruding portions define a loose zone. The oxide layer is disposed on the substrate. The word line is disposed on the substrate. A bottom surface of a portion of the word line in the dense zone and a bottom surface of a portion of the word line in the loose zone are substantially at the same height.