Patent · US Active

Emitter structure and production method

US11490460B2 · kind B2 · utility

0Cited by

3References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

David Tumpold · Tauberbischofsheim, DE
Sebastian Anzinger · Holzkirchen, DE
Christoph Glacer · Munich, DE

Key dates

Filing date	Jan 18, 2019
Grant date	Nov 1, 2022
Priority date	—
Expiry date	Sep 3, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH05B2203/032
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An emitter structure includes a substrate with a membrane arrangement. The membrane arrangement includes at least one first membrane, a first heating path and a second heating path in different substrate planes. The first heating path and the second heating path are positioned with respect to one another such that a projection of the first heating path and a projection of the second heating path onto a common plane lie at least partly next to one another in the common plane.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.