Formation of reliefs on the surface of a substrate
US11495462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2020 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Oct 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.