Multi-finger gate nonvolatile memory cell
US11495608B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Aug 3, 2020 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Dec 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device is provided. The device comprises a floating gate having a first finger and a second finger and an active region below the floating gate fingers. A first doped region is in the active region laterally displaced from the first floating gate finger on a first side. A second doped region is in the active region laterally displaced from the first floating gate finger on a second side. A third doped region is in the active region laterally displaced from the second floating gate finger and the second doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.