Patent · US Active

Method for producing a patterned layer of material

US11495710B2 · kind B2 · utility

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23Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Adrien Gasse · Grenoble, FR
Amélie Dussaigne · Bizonnes, FR
François Levy · Roye, FR

Key dates

Filing date	Dec 2, 2020
Grant date	Nov 8, 2022
Priority date	—
Expiry date	Dec 2, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10H29/142
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a patterned layer of material includes producing a first substrate having a patterned face, producing, against the patterned face of the first substrate, a stack of layers having an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate, and removing the first substrate. The intermediate layer is anisotropically etched from the first face of the intermediate layer, and at least part of the thickness of the layer to be patterned is etched, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.