Amélie Dussaigne
15Patents
1h-index
24Co-inventors
50Inventor score
Filing activity: Dec 19, 2012 → Jun 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9331233B2 | Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure | Emerging Cross-Sectional Technologies | 4 | Active |
| US10510535B2 | Optoelectronic device comprising three-dimensional semiconductor elements, and method for manufacturing said device | Emerging Cross-Sectional Technologies | 1 | Active |
| US9728680B2 | Optoelectronic device comprising microwires or nanowires | Emerging Cross-Sectional Technologies | 1 | Active |
| US12342661B2 | Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure | Electricity | 0 | Active |
| US11735693B2 | Method for manufacturing a substrate comprising a relaxed InGaN layer | Electricity | 0 | Active |
| US11495710B2 | Method for producing a patterned layer of material | Electricity | 0 | Active |
| US10615299B2 | Optoelectronic device with three-dimensional semiconductor elements | Electricity | 0 | Active |
| US10559713B2 | Multiple quantum well light-emitting device | Electricity | 0 | Active |
| US12408491B2 | Method for manufacturing a native emission matrix having doped and porosified In(x)GaN | Electricity | 0 | Active |
| US10886429B2 | Method of manufacturing an optoelectronic device by transferring a conversion structure onto an emission structure | Electricity | 0 | Active |
| US11424386B2 | Multi-color light-emitting device and method of manufacturing such a device | Electricity | 0 | Active |
| US10153393B2 | Light emitting diode of which an active area comprises layers of inn | Electricity | 0 | Active |
| US11162188B2 | Method for producing a crystalline layer in a III-N compound by van der Waals epitaxy from graphene | Chemistry; Metallurgy | 0 | Active |
| US11749779B2 | Process for manufacturing a relaxed GaN/InGaN structure | Electricity | 0 | Active |
| US9245948B2 | Optoelectric device with semiconductor microwires or nanowires and method for manufacturing the same | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.