Magnetoresistive memory device
US11495740B2 · kind B2 · utility
1Cited by
14References
7Claims
0Family size
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Key dates
| Filing date | Mar 10, 2020 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Jun 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.