Bismuth antimony alloys for use as topological insulators
US11495741B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Dec 22, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0024
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.