Inventor · Stamford, CT, US

Michael A. Gribelyuk

28Patents
9h-index
78Co-inventors
78Inventor score

Filing activity: Jul 19, 2000 → Aug 9, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7071103B2 Chemical treatment to retard diffusion in a semiconductor overlayer Electricity 120 Expired
US6982230B2 Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures Electricity 65 Expired
US6991979B2 Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs Electricity 46 Expired
US6511876B2 High mobility FETS using A1203 as a gate oxide Electricity 46 Expired
US7279413B2 High-temperature stable gate structure with metallic electrode Electricity 46 Expired
US6413386B1 Reactive sputtering method for forming metal-silicon layer Chemistry; Metallurgy 18 Expired
US7754594B1 Method for tuning the threshold voltage of a metal gate and high-k device Electricity 16 Active
US6573197B2 Thermally stable poly-Si/high dielectric constant material interfaces Electricity 15 Expired
US11495741B2 Bismuth antimony alloys for use as topological insulators Physics 11 Active
US7115959B2 Method of forming metal/high-k gate stacks with high mobility Electricity 7 Expired
US8383483B2 High performance CMOS circuits, and methods for fabricating same Electricity 7 Active
US7683418B2 High-temperature stable gate structure with metallic electrode Electricity 6 Active
US7015469B2 Electron holography method Electricity 5 Expired
US8288237B2 TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks Electricity 5 Active
US7667277B2 TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks Electricity 4 Expired
US7436034B2 Metal oxynitride as a pFET material Electricity 4 Active
US7776701B2 Metal oxynitride as a pFET material Electricity 4 Active
US7521345B2 High-temperature stable gate structure with metallic electrode Electricity 3 Active
US7091128B2 Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs Electricity 3 Expired
US11763973B2 Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devices Physics 1 Active
US8153514B2 Method of forming metal/high-κ gate stacks with high mobility Electricity 0 Active
US11875827B2 SOT reader using BiSb topological insulator Physics 0 Active
US12106791B2 Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices Electricity 0 Active
US7232774B2 Polycrystalline silicon layer with nano-grain structure and method of manufacture Electricity 0 Expired
US12125512B2 Doping process to refine grain size for smoother BiSb film surface Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.