Organometallic compounds useful for chemical phase deposition
US11498938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2020 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | Sep 2, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A method for forming a metal-containing film includes: a) providing at least one substrate; b) delivering to said substrate at least one compound of Formula 1 in the gaseous phase, (R1R2R3 (Si))—Co(CO)4 (Formula 1), wherein R1, R2 and R3 are independently selected lower alkyl groups; and c) simultaneously with or subsequently to step b), delivering to said substrate a co-reagent in the gaseous phase, the co-reagent being lower alcohol. Further, a method of selectively depositing a metal-containing film includes: a) providing at least two substrates comprising different materials, one of said at least two substrates has an affinity for Si and another of said at least two substrates has an affinity for CO; b) delivering to said substrates at least one compound of the Formula 1 in the gaseous phase; and c) simultaneously with or subsequently to step b), delivering to said at least two substrates at least one co-reagent in the gaseous phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.