Wafer inspection based on electron beam induced current
US11501949B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 2019 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | May 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A wafer inspection system is disclosed. According to certain embodiments, the system includes an electron detector that includes circuitry to detect secondary electrons or backscattered electrons (SE/BSE) emitted from a wafer. The electron beam system also includes a current detector that includes circuitry to detect an electron-beam-induced current (EBIC) from the wafer. The electron beam system further includes a controller having one or more processors and a memory, the controller including circuitry to: acquire data regarding the SE/BSE; acquire data regarding the EBIC; and determine structural information of the wafer based on an evaluation of the SE/BSE data and the EBIC data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.