Substrate processing method and substrate processing apparatus
US11501975B2 · kind B2 · utility
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2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2020 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | Jan 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method includes a providing step, a forming step, and an etching step. In the providing step, a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed to cover at least a part of the first mask is provided. In the forming step, a protective film is formed on a side wall of the second mask by plasma generated from a first gas. In the etching step, the etching target film is etched with plasma generated from a second gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.