Semiconductor device and method of producing a semiconductor device

US11501979B1 · kind B1 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Markus Beninger-Bina · Großhelfendorf, DE
• Andreas Behrendt · Villach, AT
• Mark Harrison · Wernberg, AT
• Robert Hartl · Regensburg, DE
• Peter Imrich · Villach, AT
• Reinhard Lindner · Maxhütte-Haidhof, DE
• Evelyn Napetschnig · Diex, AT

Key dates

• Filing date: Jun 17, 2021
• Grant date: Nov 15, 2022
• Expiry date: Jun 17, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/66
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device and a method of producing the semiconductor device are described. The semiconductor device includes: a semiconductor substrate; a metallization layer over the semiconductor substrate; a plating over the metallization layer, the plating including NiP; a passivation over the metallization layer and laterally adjacent the plating such that a surface of the plating that faces away from the semiconductor substrate is uncovered by the passivation, wherein a seam is present along an interface between the passivation and the plating; and a structure that covers the seam along a periphery of the plating and delimits a bondable area for the plating. The structure extends from the periphery of the plating onto the passivation. The structure includes an imide having a curing temperature below a recrystallization temperature of the NiP or an oxide having a deposition temperature below the recrystallization temperature of the NiP.