Method and system for forming metal-insulator-metal capacitors
US11502160B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Mar 2, 2020 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | Nov 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.