Optoelectronic semiconductor chip based on a phosphide compound semiconductor material

US11502222B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Xue Wang · Regensburg, DE
• Markus Broell · Cork, IE

Key dates

• Filing date: Jan 23, 2018
• Grant date: Nov 15, 2022
• Expiry date: Jan 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8162
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*1019 cm−3, and the p-contact layer is less than 100 nm thick.