Epitaxial oxide materials, structures, and devices
US11502223B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 7, 2022 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | Mar 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor structure can include a substrate comprising a first in-plane lattice constant, a graded layer on the substrate, and a first region of the graded layer comprising a first epitaxial oxide material comprising a second in-plane lattice constant. The graded layer on the substrate can include (Alx1Ga1−x1)y1Oz1, wherein x1 is from 0 to 1, wherein y1 is from 1 to 3, wherein z1 is from 2 to 4, and wherein x1 varies in a growth direction such that the graded layer has the first in-plane lattice constant adjacent to the substrate and a second in-plane lattice constant at a surface of the graded layer opposite the substrate. In some cases, a semiconductor structure includes a first region comprising a first epitaxial oxide material; a second region comprising a second epitaxial oxide material; and the graded region located between the first and the second regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.