Prism-mask for angled patterning applications
US11506982B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2018 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Mar 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. The lithographic patterning system includes an actinic radiation source, a stage having a surface for supporting a substrate with a resist layer, and a prism with a first surface over the stage, where the first surface has a masked layer and is substantially parallel to the surface of the stage. The prism may have a second surface that is substantially parallel to the first surface. The first and second surfaces are flat surfaces. The prism is a monolithic prism-mask, where an optical path passes through the system and exits the first surface of the prism through the mask layer. The system may include a layer disposed between the mask and resist layers. The mask layer of the prism may pattern the resist layer without an isolated mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.