SiC film structure
US11508570B2 · kind B2 · utility
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5References
8Claims
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Assignee
Inventor
Key dates
| Filing date | Aug 28, 2019 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Nov 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67306
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.