Aluminum nitride sintered body and member for semiconductor manufacuting apparatus comprising same
US11508586B2 · kind B2 · utility
1Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2018 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Jan 25, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/9607
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.