Interconnect structure including graphene-metal barrier and method of manufacturing the same
US11508664B2 · kind B2 · utility
2Cited by
2References
28Claims
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Key dates
| Filing date | Apr 29, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Apr 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/49877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.