Light-emitting diode chip with electrical overstress protection
US11508715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Apr 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/8511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chip structures with electrical overstress protection are disclosed. LED chip structures are disclosed that include built-in electrical overstress protection. An exemplary LED chip may include an active LED structure that is arranged as a primary light-emitting structure and a separate active LED structure that is arranged as an electrical overstress protection structure. The electrical overstress protection structure may be electrically connected in reverse relative to the primary light-emitting structure. In this manner, under normal operating conditions, forward current will flow through the primary light-emitting structure to generate desired light emissions, and during an electrical overstress event, reverse current may flow through the electrical overstress protection structure, thereby protecting the light-emitting structure from damage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.