Integrated fluxgate device
US11508721B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2021 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | May 27, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/05
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated circuit has a substrate, a circuit, a core structure, a first encapsulation layer, a second encapsulation layer, and an oxide layer. The circuit includes transistors with active regions developed on the substrate and a metal layer formed above the active regions to provide interconnections for the transistors. The core structure is formed above the metal layer. The first encapsulation layer covers the core structure, and it has a first thermal expansion coefficient. The second encapsulation layer covers the first encapsulation layer over the core structure, and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer is formed above the second encapsulation layer. The oxide layer includes an oxide thickness sufficient to mitigate a thermal stress between the first and second encapsulation layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.