Semiconductor device
US11508851B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Nov 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
Abstract
A semiconductor device includes: a substrate including an active region and a device isolation region; a flat plate structure formed on the substrate; an oxide semiconductor layer covering a top surface of the flat plate structure and continuously arranged on a top surface of the substrate in the active region and the device isolation region; a gate structure arranged on the oxide semiconductor layer and including a gate dielectric layer and a gate electrode; and a source/drain region arranged on both sides of the gate structure and formed in the oxide semiconductor layer, in which, when viewed from a side cross-section, an extending direction of the flat plate structure and an extending direction of the gate structure cross each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.