Electron beam device
US11515121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2019 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Jul 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/1501
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage. In the electron beam device, the imaging optical system includes a sensor 32 which obtains a mirror electron image and a stray light suppression part 27 which is provided between the sensor and the stage 31 and which suppresses reaching the sensor of the light emitted from the light irradiation unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.