In-situ film annealing with spatial atomic layer deposition
US11515144B2 · kind B2 · utility
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5References
7Claims
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Key dates
| Filing date | Dec 9, 2016 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Aug 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.