Selective deposition of a passivation film
US11515154B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Dec 30, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0198
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.