Capacitively coupled plasma etching apparatus
US11515168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2019 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Sep 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a capacitively coupled plasma etching apparatus, wherein an electrically conductive supporting rod where a lower electrode is fixed is connected to driving means, the driving means driving the electrically conductive support rod to move axially; besides, the lower electrode is fixed to the bottom of a chamber body via a retractable sealing part, causing the upper surface of the lower electrode to be hermetically sealed in an accommodation space in the chamber body; an electrical connection part is connected on the chamber body; the radio frequency current in the chamber body returns, via the electrical connection part, to the loop end of a radio frequency matcher. In this way, the lower electrode is fixed on the chamber body via the retractable sealing part, such that when the lower electrode is driven by the driving means to move up/down, the chamber body does not move along with it, and the radio frequency loop in the chamber body is in a steady state, thereby achieving stability of the radio frequency loop while implementing adjustability of the plate distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.